description AMS3402 is the nchannel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resistance . these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and lo w inline power loss are required. the product is in a very small outline surface moun t package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: week code feature 30v/2.8a, r ds(on) = 48m @v gs = 10v 30v/2.3a, r ds(on) = 53m @v gs = 4.5v 30v/1.5a, r ds(on) = 80m @v gs = 2.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot233l package design 3 1 2 d g s 3 1 2 a2ya
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